IXFE44N50Q Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q-Class

HiPerFET^TM
Power MOSFETs
Q-Class
IXFE 44N50Q
IXFE 48N50Q
V_DSS I_D25
R_DS(on)
500 V 39 A 120 mΩ
500 V 41 A 110 mΩ
N-Channel Enhancement Mode
Avalanche Rated, Low Q_g, High dv/dt
t_rr ≤ 250 ns
Preliminary data sheet
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
V_ISOL
M_d
Weight
Test Conditions
Maximum Ratings
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
500
V
500
V
±20
V
±30
V
T_C = 25°C
44N50Q 39
A
48N50Q 41
A
T_C = 25°C, pulse width limited by T_JM 44N50Q 176
A
48N50Q 192
A
T_C = 25°C
48
A
T_C = 25°C
60
mJ
2.5
mJ
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
15
400
-40 to +150
150
-40 to +150
V/ns
W
°C
°C
°C
50/60 Hz, RMS t = 1 min
I_ISOL≤ 1 mA
t=1s
Mounting torque
Terminal connection torque
2500
3000
1.5/13
1.5/13
19
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
V_GS = 0 V, I_D = 1 mA
V_DS = V_GS, I_D = 4 mA
V_GS = ±20 V_DC, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = I_T
Notes 1, 2
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min.
typ.
max.
500
V
2.0
4.0 V
±100 nA
T_J = 25°C
T_J = 125°C
44N50Q
48N50Q
100 µA
2 mA
120 m Ω
110 m Ω
ISOPLUS 227^TM (IXFE)
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•Conforms to SOT-227B outline
•Low R_{DS (on)} HDMOS^TM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Low cost
• Easy to mount
• Space savings
• High power density
© 2003 IXYS All rights reserved
DS98895B(08/03)