IXFE36N100 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET-TM Power MOSFET

HiPerFET^TM
Power MOSFET
Single MOSFET Die
IXFE 36N100
IXFE 34N100
V_DSS
I_D25
1000 V 33 A
1000 V 30 A
t_rr ≤ 250 ns
R_DS(on)
0.24 Ω
0.28 Ω
Preliminary data sheet
Symbol Test Conditions
V_DSS
V_DGR
V_GS
V_GSM
I_D25
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
I_DM
T_C = 25°C; Note 1
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
M_d
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
I_ISOL ≤ 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque
Weight
Maximum Ratings
36N100
34N100
36N100
34N100
1000
V
1000
V
±20
V
±30
V
33
A
30
A
144
A
136
A
36
A
64 mJ
4
J
5 V/ns
580 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
300 °C
2500 V~
3000 V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
19
g
Symbol Test Conditions
(T_J = 25°C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 3mA
V_GS(th)
V_DS = V_GS, I_D = 8mA
I_GSS
V_GS = ±20V, V_GS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0 V
R_DS(on)
V_GS = 10V, I_D = I_T
Note 2
Characteristic Values
Min. Typ. Max.
1000
V
3.0
5.0 V
±200 nA
T_J = 25°C
T_J = 125°C
36N100
34N100
100 µA
2 mA
0.24 Ω
0.28 Ω
ISOPLUS 227^TM (IXFE)
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•Conforms to SOT-227B outline
•Low R_{DS (on)} HDMOS^TM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Low cost
• Easy to mount
• Space savings
• High power density
© 2002 IXYS All rights reserved
98897 (1/02)