IXFE180N20 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs Single Die MOSFET

HiPerFET^TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t_rr
IXFE 180N20
D
G
V_DSS
I_D25
R_DS(on)
t_rr
= 200
= 158
= 12
< 250
V
A
mΩ
ns
Preliminary Data Sheet
S
S
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_L(RMS)
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C, Chip capability
Terminal current limit
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
IT_{S J}
≤
≤
I1_{D5M0, °}dCi/d, tR≤_G
100
=2
A/µs,
Ω
V_DD
≤
V_DSS,
T_C = 25°C
50/60 Hz, RMS t = 1 min
I_ISOL≤ 1 mA
t=1s
Mounting torque
Terminal connection torque
Maximum Ratings
200
V
200
V
±20
V
±30
V
158
A
100
A
720
A
100
A
64
mJ
4
J
5 V/ns
500
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
19
g
ISOPLUS 227^TM (IXFE)
S
G
G = Gate
S = Source
S
D
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•Conforms to SOT-227B outline
•Low R_{DS (on)} HDMOS^TM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
•Fast intrinsic Rectifier
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
Applications
Symbol
V_DSS
V_GH(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
V_GS = 0 V, I_D = 3 mA
V_DS = V_GS, I_D = 8 mA
V_GS = ±20 V_DC, V_DS = 0
VV_GDSS
=
=
0VV^DSS
V_GS = 10 V, I_D = 0.5 • I_D25
Pulse test, t ≤ 300 µs,
duty cycle d ≤ 2 %
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
200
V
2
4V
TT_JJ
= 25°C
= 125°C
±200 nA
100 µA
2 mA
12 mΩ
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
© 2003 IXYS All rights reserved
DS99040(04/03)