IXFE180N10 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET-TM Power MOSFET

HiPerFET^TM
Power MOSFET
Single Die MOSFET
IXFE 180N10
V_DSS
I_D25
R_DS(on)
= 100 V
= 176 A
= 8 mΩ
t_rr ≤ 250 ns
Preliminary data sheet
Symbol Test Conditions
V_DSS
V
DGR
V_GS
V_GSM
I_D25
I_L(RMS)
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T
J
T_JM
T_stg
T_L
V_ISOL
M
d
T_J = 25°C to 150°C
T
J
=
25°C
to
150°C,
R
GS
=
1MΩ
Continuous
Transient
T_C = 25°C
Terminal (current limit)
T_C = 25°C; Note 1
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
I_ISOL ≤ 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque
Weight
Maximum Ratings
100
V
100
V
±20
V
±30
V
176
A
100
A
720
A
180
A
60 mJ
3
J
5 V/ns
500
W
-55 ... +150 °C
150 °C
-55 ... +150 °C
300 °C
2500 V~
3000 V~
1.5/13Nm/lb.in.
1.5/13Nm/lb.in.
19
g
Symbol Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
Characteristic Values
Min. Typ. Max.
V_DSS
V_GS= 0 V, I_D = 3mA
100
V
V_GS(th) V_DS = V_GS, I_D = 8mA
2
4V
I_GSS
V_GS= ±20V, V_GS = 0V
±100 nA
I_DSS
V_DS= V_DSS
V_GS= 0 V
T_J = 25°C
T_J = 125°C
100 µA
2 mA
R_DS(on)
V_GS = 10V, I_D = I_T
Note 2
8 mΩ
ISOPLUS 227^TM (IXFE)
S
G
G = Gate
S = Source
S
D
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•Conforms to SOT-227B outline
•Encapsulating epoxy meets
UL 94 V-0, flammability classification
•Low R_{DS (on)} HDMOS^TM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
•Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount
• Space savings
• High power density
© 2002 IXYS All rights reserved
98902 (2/02)