IXFC96N15P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHT HiPerFET Power MOSFET ISOPLUS220

PolarHT^TM HiPerFET
Power MOSFET
ISOPLUS220^TM
(Electrically Isolated Back Surface)
IXFC 96N15P
N-Channel Enhancement Mode
Fast Recovery Diode, Avalanche Rated
V_DSS =
I_D25 =
= R_DS(on)
t_rr
<
150 V
42 A
26 mΩ
200 ns
Symbol
Test Conditions
Maximum Ratings
ISOPLUS 220^TM
E153432
V_DSS
V_DGR
V_GS
V_GSM
I
D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T
J
T_JM
T_stg
T_L
F_C
V_ISOL
Weight
T_J = 25°C to 175°C
T_J = 25°C to 175°C; R_GS = 1 MΩ
Continuous
Transient
T
C
= 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS,
T
J
≤
175°C,
R
G
=
4
Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting force
50/60 Hz, 1 minute
150
V
150
V
±20
V
±30
V
42
A
250
A
60
A
40
mJ
1.0
J
10
V/ns
120
-55 ... +175
175
-55 ... +150
300
11...65/2.4...11
2500
3
W
°C
°C
°C
°C
N/lb
~V
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 μA
Characteristic Values
Min. Typ. Max.
150
V
V_GS(th)
V_DS = V_GS, I_D = 4 mA
3.0
5.0 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 150 °C
25 μA
300 μA
R
DS(on)
V = 10 V, I = 48 A, Note 1
GS
D
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
26 mΩ
G
DS
Isolated back surface*
G = Gate
S = Source
D = Drain
Features
z _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z _{Low drain to tab capacitance(<35pF)}
z _{Low RDS (on) HDMOS}TM _process
z _{Rugged polysilicon gate cell structure}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Fast intrinsic Rectifier}
Applications
z _{DC-DC converters}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{AC motor control}
Advantages
z _{Easy assembly: no screws, or isolation}
foils required
z _{Space savings}
z _{High power density}
z _{Low collector capacitance to ground}
(low EMI)
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DS99240E(03/06)