IXFC80N085 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET MOSFET ISOPLUS220

HiPerFET^TM MOSFET
ISOPLUS220^TM
IXFC 80N085
Electrically Isolated Back Surface
N-Channel Enhancement Mode
High dv/dt, Low t_rr, HDMOS^TM Family
V_DSS = 85 V
I_D25 = 80 A
R_DS(on) = 11 mΩ
t_rr ≤ 200 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_L(RMS)
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
F_C
V_ISOL
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
TLe_{C a=d}
25°C
current
limit
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting force
50/60 Hz, RMS t = 1 minute leads-to-tab
Maximum Ratings
85
V
85
V
±20
V
±30
V
80
A
45
A
75
A
320
A
30
mJ
1.0
J
5 V/ns
230
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
11..65/2.4..11 Nm/lb
2500
V~
2
g
Test Conditions
V_GS = 0 V, I_D = 250 µA
V_DS = V_GS, I_D = 4 mA
V_GS = ±20 V_DC, V_DS = 0
VV_DGSS
=
=
0V^DV^SS
V_GS = 10 V, I_D = I_T
Notes 1, 2
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
85
V
2.0
4.0 V
TT_JJ
=
=
25°C
125°C
±100 nA
50 µA
1 mA
11 mΩ
ISOPLUS220^TM
G
DS
Isolated back surface*
G = Gate,
S = Source
D = Drain,
* Patent pending
Features
z _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z _{Lowdraintotabcapacitance(<35pF)}
z _{Low RDS (on)}
z _{Ruggedpolysilicongatecellstructure}
z _{UnclampedInductiveSwitching(UIS)}
rated
z _{Fast intrinsicRectifier}
Applications
z _{DC-DC converters}
z _{Batterychargers}
z _{Switched-modeandresonant-mode}
power supplies
z _{DC choppers}
z _{AC motor control}
Advantages
z _{Easy assembly: no screws or isolation}
foils required
z _{Space savings}
z _{High power density}
z _{Lowcollectorcapacitancetoground}
(low EMI)
© 2004 IXYS All rights reserved
DS98851D(05/04)