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IXFC80N08 Datasheet, PDF (1/2 Pages) IXYS Corporation – HIPERFET-TM MOSFET ISOPLUS220-TM
ADVANCE TECHNICAL INFORMATION
HiPerFETTM MOSFET
ISOPLUS220TM
IXFC 80N08
Electrically Isolated Back Surface IXFC 80N085
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
VDSS
80 V
85 V
ID25
80 A
80 A
RDS(on)
9 mΩ
9 mΩ
Symbol
VDSS
V
DGR
VGS
VGSM
ID25
IL(RMS)
I
DM
IAR
EAR
EAS
dv/dt
PD
TJ
T
JM
Tstg
TL
FC
V
ISOL
Weight
Symbol
VDSS
VGS(th)
I
GSS
IDSS
RDS(on)
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
80N08
80
V
TJ = 25°C to 150°C; RGS = 1 MΩ
80N085
85
V
Continuous
Transient
±20
V
±30
V
TC = 25°C
Lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
80
A
80
A
75
A
320
A
30
mJ
1.0
J
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
5 V/ns
230
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.6 mm (0.062 in.) from case for 10 s
300
°C
Mounting force
11..65/2.4..11 Nm/lb
50/60 Hz, RMS t = 1 minute leads-to-tab
2500
V~
2
g
Test Conditions
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = IT
Notes 1, 2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
80N08 80
80N085 85
2.0
TJ = 25°C
TJ = 125°C
V
4.0 V
±100 nA
50 µA
1 mA
9 mΩ
ISOPLUS 220TM
G
D
S
Isolated back surface*
G = Gate,
S = Source
D = Drain,
* Patent pending
Features
l Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l Lowdraintotabcapacitance(<35pF)
l Low RDS (on)
l Ruggedpolysilicongatecellstructure
l UnclampedInductiveSwitching(UIS)
rated
l FastintrinsicRectifier
Applications
l DC-DC converters
l Batterychargers
l Switched-modeandresonant-mode
power supplies
l DC choppers
l AC motor control
Advantages
l Easy assembly: no screws or isolation
foils required
l Space savings
l High power density
l Lowcollectorcapacitancetoground
(low EMI)
© 2001 IXYS All rights reserved
98851 (8/01)