IXFC74N20P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHT HiPerFET Power MOSFET ISOPLUS220

PolarHT^TM HiPerFET ^{IXFC 74N20P}
Power MOSFET
ISOPLUS220^TM
(Electrically Isolated Back Surface)
V=
DSS
I_D25 =
= R_DS(on)
t_rr
≤
200 V
35 A
36 mΩ
200 ns
N-Channel Enhancement Mode
Fast Recovery Diode, Avalanche
Rated
Symbol
Test Conditions
Maximum Ratings
ISOPLUS 220^TM
E153432
V
DSS
V_DGR
V_GS
V
GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P
D
T_J
T_JM
T
stg
T
L
V_ISOL
F_C
Weight
T
J
= 25°C to 175°C
200
T_J = 25°C to 175°C; R_GS = 1 MΩ
200
Continuous
±20
Transient
±30
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 4 Ω
T
C
= 25°C
35
200
60
40
1.0
10
120
-55 ... +175
175
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
50/60 Hz, RMS, I_ISOL ≤ 1 mA, t = 1 minute
2500
Mounting Force
11..65 / 2.5..15
3
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
V~
N/lb
g
Symbol
Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
BV_DSS
V_GS = 0 V, I_D = 250 μA
Characteristic Values
Min. Typ. Max.
200
V
V_GS(th)
V_DS = V_GS, I_D = 4 mA
2.5
5.0 V
I
GSS
V
GS
=
±20
V,
DC
V
DS
=
0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125°C
25 μA
250 μA
R_DS(on)
V_GS = 10 V, I_D = 37 A
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
36 mΩ
G
DS
Isolated back surface*
G = Gate
S = Source
D = Drain
Features
z _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z _{Low drain to tab capacitance(<35pF)}
z _{Low RDS (on) HDMOS}TM _process
z _{Rugged polysilicon gate cell structure}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Fast intrinsic Rectifier}
Applications
z _{DC-DC converters}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{AC motor control}
Advantages
z _{Easy assembly: no screws, or isolation}
foils required
z _{Space savings}
z _{High power density}
z _{Low collector capacitance to ground}
(low EMI)
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DS99243E(03/06)