IXFC52N30P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHTTM HiPerFET Power MOSFET

Advance Technical Information
PolarHT^TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
IXFC52N30P
V
DSS
I_D25
R_DS(on)
= 300 V
= 32 A
= 75 mΩ
Symbol
V_DSS
V
DGR
V
GSS
V_GSM
I_D25
I
DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T
JM
T_stg
T_L
V_ISOL
F_C
Test Conditions
T_J = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MΩ
Continuous
Transient
T_C = 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 4 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, t = 1minute, leads-to-tab
Mounting Force
Maximum Ratings
300
V
300
V
±20
V
±30
V
32
A
150
A
52
A
30
mJ
1.0
J
ISOPLUS220^TM (IXFC)
E153432
G
DS
G = Gate
S = Source
D = Drain
TAB = Drain
10
V/ns
100
-55 ... +150
150
-55 ... +150
300
2500
11..65/2.5..15
W
°C
°C ^Features
°C ^z Silicon chip on Direct-Copper-Bond
substrate
°C _{- High power dissipation}
V~ _{- Isolated mounting surface}
- 2500V electrical isolation
N/lb ^{z Low drain to tab capacitance(<30pF)}
Weight
ISOPLUS220
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V
DSS
V
GS
=
0
V,
I
D
=
250
µA
2.0
g
Characteristic Values
Min. Typ. Max.
300
V
V_GS(th)
V_DS = V_GS, I_D = 4 mA
2.5
5.0 V
I
GSS
V
GS
=
±20
V,
DC
V
DS
=
0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125°C
25 µA
250 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
65
75 m Ω
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
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DS99115A(04/05)