IXFC36N50P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET ^{IXFC 36N50P}
Power MOSFET
IXFR 36N50P
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V_DSS =
I_D25 =
≤ R_DS(on)
t_rr
≤
500
19
190
200
V
A
mΩ
ns
Symbol
V_DSS
V_DGR
Test Conditions
T_J = 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Maximum Ratings
500
V
500
V
ISOPLUS220^TM (IXFC)
E153432
V
GSS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
Continuous
Transient
T_C = 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
± 30
± 40
19
100
36
50
1.5
V
V
G
DS
A
Isolated back surface
A
A ISOPLUS247^TM (IXFR)
mJ
E153432
J
dv/dt
P_D
T_J
T_JM
T_stg
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 4 Ω
T_C = 25° C
20
156
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
G
D
S
Isolated back surface
G = Gate
S = Source
D = Drain
T
L
V_ISOL
F_C
Weight
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, 1 minute
300
°C
2500
V~
Mounting Force
(IXFC)
(IXFR)
(IXFC)
(IXFR)
11..65 / 2.5..15
N/lb
20..120 / 4.5..25
N/lb
3
g
5
g
Symbol
Test Conditions
(T_J = 25° C unless otherwise specified)
BV
DSS
V
GS
=
0
V,
I
D
=
250
µA
V_GS(th)
V_DS = V_GS, I_D = 4 mA
I_GSS
V_GS = ± 30 V_DC, V_DS = 0
I_DSS
V_DS = V_DSS
V =0V
GS
R_DS(on)
V_GS = 10 V, I_D = I_T
Characteristic Values
Min. Typ. Max.
500
V
2.5
5.0 V
± 100 nA
T
J
=
125°
C
25 µA
250 µA
190 m Ω
Features
l _{International standard isolated}
packages
l _{UL recognized packages}
l _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
l _{Fast intrinsic diode}
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99312E(10/05)