IXFC22N60P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET ISOPLUS220

PolarHV^TM HiPerFET
Power MOSFET
ISOPLUS220^TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
IXFC 22N60P
V_DSS = 600
I_D25 = 12
R_DS(on) ≤ 360
t_rr
≤ 200
V
A
mΩ
ns
Symbol
Test Conditions
Maximum Ratings
V_DSS
V_DGR
V
GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T
J
T_JM
T_stg
T_L
V
ISOL
F_C
Weight
T_J = 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Continuous
Tranisent
T_C = 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS
T_J ≤150° C, R_G = 4 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
600
600
± 30
± 40
12
66
22
40
1.0
10
130
-55 ... +150
150
-55 ... +150
300
50/60 Hz, RMS t = 1 minute leads-to-tab
2500
Mounting Force
11..65/2.5..15
2
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
V~
N/lb
g
Symbol
Test Conditions
(T_J = 25° C unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
V_GS(th)
V_DS = V_GS, I_D = 4 mA
I_GSS
V_GS = ± 30 V_DC, V_DS = 0
I
DSS
V =V
DS
DSS
V_GS = 0 V
R_DS(on)
V_GS = 10 V, I_D = I_T , Note 1
T_J = 125° C
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.0 V
±100 nA
25 µA
250 µA
360 m Ω
ISOPLUS220^TM (IXFC)
E153432
G
DS
(Isolated back surface*)
G = Gate
S = Source
D = Drain
Features
l _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l _{Low drain to tab capacitance(<35pF)}
l _{Low R HDMOS}TM _process
DS (on)
l _{Rugged polysilicon gate cell structure}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Fast intrinsic Rectifier}
Applications
l _{DC-DC converters}
l _{Battery chargers}
l _{Switched-mode and resonant-mode}
power supplies
l _{DC choppers}
l _{AC motor control}
Advantages
l _{Easy assembly: no screws, or isolation}
foils required
l _{Space savings}
l _{High power density}
l _{Low collector capacitance to ground}
(low EMI)
© 2006 IXYS All rights reserved
DS99439E(02/06)