IXFC20N80P Datasheet, PDF (1/4 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET ^{IXFC 20N80P}
Power MOSFET
IXFR 20N80P
Electrically Isolated Back Surface
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
V_DSS = 800 V
I_D25 = 10 A
R_DS(on) ≤ 500 mΩ
t_rr ≤ 250 ns
Symbol
V
DSS
V_DGR
V
GSS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
Test Conditions
T
J
= 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
Maximum Ratings
800
V
800
V
ISOPLUS220^TM (IXFC)
E153432
±30
V
±40
V
G
11
A
D
S
Isolated back surface
60
A
10
A _{ISOPLUS247TM (IXFR)}
30
mJ
E153432
1.0
J
dv/dt
P_D
T_J
T_JM
T_stg
T
L
V_ISOL
F_C
Weight
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 3 Ω
T_C = 25°C
10
166
-55 ... +150
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
50/60 Hz, RMS, t = 1minute, leads-to-tab
2500
Mounting Force
ISOPLUS220
ISOPLUS247
(IXFC)
(IXFR)
11..65 / 2.5..15
20..120 / 4.5..25
2
5
V/ns
W
°C
°C
°C
°C
V~
N/lb
N/lb
g
g
Isolated back surface
G = Gate
S = Source
D = Drain
Features
z _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z _{Low drain to tab capacitance(<30pF)}
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 μA
V_GS(th)
V_DS = V_GS, I_D = 4 mA
I_GSS
V_GS = ±30 V, V_DS = 0 V
Characteristic Values
Min. Typ. Max.
800
V
3.0
5.0 V
±100 nA
Applications
z _{DC-DC converters}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{AC motor control}
I_DSS
R_DS(on)
V_DS = V_DSS
V =0V
GS
T
J
=
125°C
V_GS = 10 V, I_D = 10 A
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
25 μA
1 mA
500 mΩ
Advantages
z _{Easy assembly}
z _{Space savings}
z _{High power density}
© 2006 IXYS All rights reserved
DS99602E(08/06)