IXFC16N50P Datasheet, PDF (1/4 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET
Power MOSFET
IXFC16N50P
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
Maximum Ratings
500
V
500
V
±30
V
±40
V
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
10
A
35
A
10
A
750
mJ
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
10
125
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
1.6mm (0.062 in.) from Case for 10s
300
Plastic Body for 10s
260
50/60 Hz, RMS
t = 1min
2500
I_ISOL ≤ 1mA
t = 1s
3000
Mounting Force
11..65 / 2.5..14.6
°C
°C
V~
V~
N/lb.
2
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 2.5mA
I_GSS
V_GS = ±30V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS= 0V
R_DS(on)
V_GS = 10V, I_D = 8A, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
500
V
3.0
5.5 V
±100 nA
15 μA
250 μA
450 mΩ
V_DSS =
I_D25 =
≤ R_DS(on)
t
rr
≤
500V
10A
450mΩ
200ns
ISOPLUS 220^TM
E153432
G
DS
G = Gate
S = Source
Isolated Tab
D = Drain
Features
z _{UL Recognized Package}
z _{Silicon Chip on Direct-Copper-Bond}
Substrate
- High Power Dissipation
- Isolated Mounting Surface
- 2500V Electrical Isolation
z _{Avanlache Rated}
z _{Fast Intrinsic Diode}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications:
z _{Switched-Mode and Resonant-Mode}
Power Supplies
z _{DC-DC Converters}
z _{Laser Drivers}
z _{AC and DC Motor Drives}
z _{Robotics and Servo Controls}
© 2009 IXYS CORPORATION, All Rights Reserved
DS99411F(5/09)