IXFC15N80Q Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET ISOPLUS 220 MOSFET Q-Class Electrically Isolated Back Surface

HiPerFET^TM
IXFC 15N80Q
ISOPLUS 220^TM MOSFET
Q-Class
Electrically Isolated Back Surface
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q_g
V_DSS
I_D25
R_DS(on)
= 800 V
= 13 A
= 0.65 Ω
t_rr ≤ 250 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS t = 1 min leads to tab
mounting force with clip
Maximum Ratings
800
V
800
V
±20
V
±30
V
13
A
60
A
15
A
30
mJ
1.0
J
10
V/ns
230
W
-40 ... +150
°C
150
°C
-40 ... +150
°C
300
°C
2500
V
11...65 / 2.5...15
N/lb
2
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 3 mA
Characteristic Values
Min. Typ. Max.
800
V
V_GS(th)
V_DS = V_GS, I_D = 4 mA
2.0
4.5 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
25 µA
1 mA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
0.65 Ω
ISOPLUS220^TM
G
DS
Isolated back surface*
G = Gate
S = Source
D = Drain
Features
z Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z Low drain to tab capacitance(<35pF)
z
z
LRouwggRe_DdS
p^(ono⁾ lysilicon
gate
cell
structure
z Unclamped Inductive Switching (UIS)
rated
z Fast intrinsic Rectifier
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor control
Advantages
z Easy assembly: no screws or isolation
foils required
z Space savings
z High power density
See IXFH15N80Q data sheet for
characteristic curves
© 2003 IXYS All rights reserved
DS98946B(07/03)