IXFC14N80P Datasheet, PDF (1/4 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET ISOPLUS 220

PolarHV^TM HiPerFET IXFC 14N80P
Power MOSFET
ISOPLUS 220^TM
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V = 800 V
DSS
I_D25 =
8A
R_DS(on) ≤ 770 mΩ
trr ≤ 250 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I
DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T
JM
T_stg
T_L
V_ISOL
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I
S
≤
I,
DM
di/dt
≤
100
A/μs,
V
DD
≤
V,
DSS
T_J ≤ 150°C, R_G = 5 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, t = 1, leads-to-tab
Mounting Force
Maximum Ratings
800
V
800
V
±30
V
±40
V
8
A
40
A
7
A
30
mJ
1.2
J
10
V/ns
130
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
2500
V~
11..65/2.5..15
N/lb
2
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 μA
Characteristic Values
Min. Typ. Max.
800
V
V
GS(th)
V = V , I = 4 mA
DS
GS D
3.0
5.5 V
I_GSS
V_GS = ±30 V, V_DS = 0 V
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125°C
25 μA
1 mA
R
DS(on)
V = 10 V, I = 7 A
GS
D
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
770 mΩ
ISOPLUS220^TM (IXFC)
E153432
G
DS
(Isolated Tab)
G = Gate
S = Source
D = Drain
Features
z _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z _{Low drain to tab capacitance(<30pF)}
Applications
z _{DC-DC converters}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{AC motor control}
Advantages
z _{Easy assembly}
z _{Space savings}
z _{High power density}
© 2006 IXYS All rights reserved
DS99594E(07/06)