IXFC14N60P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET
Power MOSFET
IXFC14N60P
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
Maximum Ratings
600
V
600
V
±30
V
±40
V
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
8
A
42
A
14
A
900
mJ
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
10
125
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
1.6mm (0.062 in.) from case for 10s
300
Plastic body for 10s
260
50/60 Hz, RMS
t = 1min
2500
I_ISOL ≤ 1mA
t = 1s
3000
Mounting force
11..66 / 2.5..14.6
°C
°C
V~
V~
N/lb.
2
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 2.5mA
I_GSS
V_GS = ±30V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
R_DS(on)
V_GS = 10V, I_D = 7A, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.5 V
±100 nA
5 μA
500 μA
630 mΩ
V_DSS =
I_D25 =
≤ R_DS(on)
t
rr
≤
600V
8A
630mΩ
200ns
ISOPLUS 220^TM
E153432
G
DS
G = Gate
S = Source
Isolated Tab
D = Drain
Features
UL recognized package
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Avanlache rated
Fast intrinsic diode
Advantages
Easy to mount
Space savings
High power density
Applications:
Switched-mode and resonant-mode
power supplies
DC-DC Converters
Laser Drivers
AC and DC motor drives
Robotics and servo controls
© 2008 IXYS CORPORATION, All rights reserved
DS99409F(12/08)