IXFC110N10P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET ISOPLUS220

PolarHV^TM HiPerFET
Power MOSFET
ISOPLUS220^TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
IXFC 110N10P
V_DSS = 100 V
I_D25 = 60 A
≤ R_DS(on) 17 m Ω
t_rr
≤ 150 ns
Symbol
V_DSS
V_DGR
V_GSS
V
GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P
D
T_J
T_JM
T
stg
T_L
T_SOLD
V_ISOL
F_C
Weight
Test Conditions
Maximum Ratings
T_J = 25° C to 175° C
T_J = 25° C to 175° C; R_GS = 1 MΩ
Continuous
Transient
100
V
100
V
±20
V
±30
V
T_C = 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 4 Ω
T
C
= 25° C
60
A
250
A
60
A
40
mJ
1.0
J
10
V/ns
120
W
-55 ... +175
°C
175
°C
-55 ... +150
°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
50/60 Hz, RMS t = 1 minute leads-to-tab
300
°C
260
°C
2500
V~
Mounting Force
11..65 / 2.5..15
N/lb
2
g
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
V_GS(th)
V_DS = V_GS, I_D = 4 mA
I_GSS
V_GS = ±20 V_DC, V_DS = 0
I_DSS
V_DS = V_DSS
V_GS = 0 V
R_DS(on)
V_GS = 10 V, I_D = 55 A
Characteristic Values
Min. Typ. Max.
100
V
2.5
5.0 V
±100 nA
T_J = 150° C
25 µA
250 µA
17 m Ω
ISOPLUS220^TM (IXFC)
E153432
G
DS
G = Gate
S = Source
Isolated back surface
D = Drain
Features
l _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l _{Low drain to tab capacitance(<35pF)}
l _{Low RDS (on) HDMOS}TM _process
l _{Rugged polysilicon gate cell structure}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Fast intrinsic Rectifier}
Applications
l _{DC-DC converters}
l _{Battery chargers}
l _{Switched-mode and resonant-mode}
power supplies
l _{DC choppers}
l _{AC motor control}
Advantages
l _{Easy assembly: no screws, or isolation}
foils required
l _{Space savings}
l _{High power density}
l _{Low collector capacitance to ground}
(low EMI)
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DS99370E(03/06)