IXFB82N60P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFB 82N60P
V = 600 V
DSS
I = 82 A
D25
≤ R_DS(on) 75 mΩ
t_rr ≤ 200 ns
Symbol
V_DSS
V_DGR
V
GSS
V_GSM
I_D25
I_DRMS
I
DM
I_AR
E_AR
E_AS
dv/dt
P
D
T_J
T_JM
T
stg
T_L
T
SOLD
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
External lead current limit
T
C
= 25°C, pulse width limited by
T
JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting force
Maximum Ratings PLUS264^TM (IXFB)
600
V
600
V
±30
±40
82
75
200
82
100
5
20
1250
-55 ... +150
150
-55 ... +150
300
260
30..120/7.5...2.7
10
V
V
G
D
S
A
A
A _{G = Gate}
A ^{S = Source}
D = Drain
TAB = Drain
(TAB)
mJ
J
V/ns
W
°C
°C
°C
Features
z _{International standard packages}
z _{Fast recovery diode}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
°C
°C Advantages
N/lb _{z Plus 264TM package for clip or spring}
g ^{z Space savings}
z _{High power density}
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 3 mA
Characteristic Values
Min. Typ. Max.
600
V
V
GS(th)
V = V , I = 8 mA
DS
GS D
3.0
5.0 V
I_GSS
V_GS = ±30 V_DC, V_DS = 0
±200 nA
I
DSS
V =V
DS
DSS
V_GS = 0 V
T_J = 125°C
25 μA
2000 μA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25, Note 1
75 mΩ
© 2006 IXYS All rights reserved
DS99530E(08/06)