IXFB80N50Q2 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q-Class

Advance Technical Information
HiPerFET^TM
Power MOSFETs
Q-Class
IXFB 80N50Q2
N-Channel Enhancement Mode
Avalanche Rated,
High dV/dt, Low t
Low
Q_g,
Low
Intrinsic
R_g
rr
V_DSS = 500 V
I_D25 = 80 A
R_DS(on)= 55 mΩ
t
rr
≤ 250 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS
T
J
≤
150°C,
R
G
=
2
Ω
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
Maximum Ratings
500
V
500
V
±30
V
±40
V
80
A
320
A
80
A
60
mJ
5.0
J
20 V/ns
890
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
Test Conditions
V_GS = 0 V, I_D = 1mA
V_DS = V_GS, I_D = 8mA
V_GS = ±20 V, V_DS = 0
V =V
DS
DSS
V_GS = 0 V
V_GS = 10 V, I_D = 0.5 • I_D25
Note 1
Characteristic Values
(T_J
=
25°C,
unless otherwise specified)
min. typ. max.
500
V
3.0
5.0 V
±200 nA
T=
J
25°C
T_J = 125°C
100 µA
5 mA
55 mΩ
PLUS 264^TM (IXFB)
G
D
S
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
● _{Double metal process for low gate}
resistance
● _{Unclamped Inductive Switching (UIS)}
rated
● _{Low package inductance}
- easy to drive and to protect
● _{Fast intrinsic rectifier}
Applications
● _{DC-DC converters}
● _{Switched-mode and resonant-mode}
power supplies, >500kHz switching
● _{DC choppers}
● _{Pulsegeneration}
● _{Laser drivers}
Advantages
● _{PLUS 264}TM _{package for clip or spring}
mounting
● _{Space savings}
● _{High power density}
© 2002 IXYS All rights reserved
DS98958 (10/02)