IXFB72N55Q2 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q-Class

HiPerFET^TM
Power MOSFETs
Q-Class
IXFB 72N55Q2
N-Channel Enhancement Mode
Avalanche Rated, Low Q_g, Low Intrinsic R_g
High dV/dt, Low t_rr
Preliminary Data Sheet
V_DSS = 550 V
I_D25 = 72 A
R_DS(on)= 72 mΩ
t_rr ≤ 250 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
F_c
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
TT_JJ
= 25°C to 150°C
= 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
TT_CC
=
=
25°C,
25°C
pulse
width
limited
by
T_JM
TT_CC
= 25°C
= 25°C
IT_SJ
≤
≤
I1_{D5M0, °}dCi/d, tR≤_G
100
=2
A/µs,
Ω
V_DD
≤
V_DSS
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting Force
Maximum Ratings
550
V
550
V
±30
V
±40
V
72
A
284
A
72
A
60
mJ
5.0
J
20 V/ns
890
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
30...120/7.5...27 N/lb
10
g
Test Conditions
V_GS = 0 V, I_D = 1mA
V_DS = V_GS, I_D = 8mA
V_GS = ±30 V, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
VN_GoSt=e
10
1
V,
I_D
=
0.5
•
I_D25
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
550
V
2.5
5.0 V
±200 nA
T_J = 25°C
T_J = 125°C
100 µA
5 mA
72 mΩ
PLUS 264^TM (IXFB)
G
D
S
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
z _{Double metal process for low gate}
resistance
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
z _{Fast intrinsic rectifier}
Applications
z _{DC-DC converters}
z _{Switched-mode and resonant-mode}
power supplies, >500kHz switching
z _{DC choppers}
z _{Pulsegeneration}
z _{Laser drivers}
Advantages
z _{PLUS 264}TM _{package for clip or spring}
mounting
z _{Space savings}
z _{High power density}
© 2003 IXYS All rights reserved
DS98999C(10/03)