IXFB70N60Q2 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFET Q-Class

Advance Technical Information
HiPerFET^TM
Power MOSFETs
Q-Class
IXFB 70N60Q2
N-Channel Enhancement Mode
Avalanche Rated, Low Q_g, Low Intrinsic R_g
High dV/dt, Low t_rr
V = 600 V
DSS
I_D25 = 70 A
R_DS(on)= 80 mΩ
t_rr ≤ 250 ns
Symbol
V_DSS
V
DGR
V_GS
V
GSM
I_D25
I
DM
I_AR
E_AR
E_AS
dv/dt
P
D
T_J
T_JM
T_stg
T
L
Symbol
V
DSS
V_GS(th)
I
GSS
I_DSS
R_DS(on)
PLUS 264^TM (IXFB)
Test Conditions
T_J = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MΩ
Continuous
Transient
T_C = 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS
T_J ≤ 150°C, R_G = 2 Ω
T
C
= 25°C
1.6 mm (0.063 in.) from case for 10 s
Maximum Ratings
600
V
600
V
±30
V
±40
V
70
A
280
A
70
A
60
mJ
5.0
J
20 V/ns
890
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
G
D
S
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
Double metal process for low gate
resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
Test Conditions
V = 0 V, I = 1mA
GS
D
V_DS = V_GS, I_D = 8mA
V
GS
=
±30
V,
V
DS
=
0
V_DS = V_DSS
V =0V
GS
V_GS = 10 V, I_D = 0.5 • I_D25
Note 1
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
600
V
3.0
5.0 V
±200 nA
T_J = 25°C
T
J
= 125°C
50 µA
3 mA
80 mΩ
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Advantages
PLUS 264^TM package for clip or spring
mounting
Space savings
High power density
© 2003 IXYS All rights reserved
DS99006(02/03)