IXFB60N80P Datasheet, PDF (1/4 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET ^{IXFB 60N80P}
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V=
DSS
I=
D25
≤ R_DS(on)
t_rr
≤
800 V
60 A
140 mΩ
250 ns
Symbol
V_DSS
V_DGR
V
GSS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
F
C
Weight
Test Conditions
T_J = 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 2 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting force
Maximum Ratings PLUS264^TM (IXFB)
800
V
800
V
±30
±40
60
150
30
100
5
20
1250
-55 ... +150
150
-55 ... +150
300
260
30..120/7.5...2.7
10
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
°C
N/lb
g
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l _{International standard packages}
l _{Fast recovery diode}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
l _{Plus 264}TM _{package for clip or spring}
l _{Space savings}
l _{High power density}
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 3 mA
Characteristic Values
Min. Typ. Max.
800
V
V
GS(th)
V = V , I = 8 mA
DS
GS D
3.0
5.0 V
I_GSS
V_GS = ±30 V_DC, V_DS = 0
±200 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125° C
25 µA
3000 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25, Note 1
140 m Ω
© 2006 IXYS All rights reserved
DS99560E(02/06)