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| IXFB50N80Q2 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q-Class | |||
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HiPerFETTM
Power MOSFETs
Q-Class
IXFB50N80Q2
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic RG
High dV/dt, Low trr
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1Mâ¦
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ⤠IDM, VDD ⤠VDSS, TJ ⤠150°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Maximum Ratings
800
V
800
V
± 30
V
± 40
V
50
A
200
A
50
A
5
J
20
V/ns
1135
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
10
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS
VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 ⢠ID25, Note 1
Characteristic Values
Min. Typ. Max.
800
V
3.0
5.5 V
± 200 nA
50 µA
3 mA
160 mâ¦
VDSS =
ID25
=
RDS(on) â¤
trr
â¤
800V
50A
160mâ¦
300ns
PLUS264
G
D
S
G = Gate
S = Source
Tab
D = Drain
Tab = Drain
Features
Double Metal Process for Low Gate
Resistance
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Switch-Mode and Resonant-Mode
Power Supplies >500kHz Switching
DC-DC Converters
DC Choppers
Pulse Generation
Laser Drivers
© 2010 IXYS CORPORATION, All Rights Reserved
DS99005D(01/10)
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