IXFB40N110P Datasheet, PDF (1/4 Pages) IXYS Corporation – Polar Power MOSFET HiPerFET

Polar^TM Power MOSFET
HiPerFET^TM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFB40N110P
V_DSS =
I_D25 =
≤ R_DS(on)
t_rr
≤
1100V
40A
260mΩ
300ns
PLUS264^TM (IXFB)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_AR
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T
SOLD
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting force
Maximum Ratings
1100
V
1100
V
±30
V
±40
V
40
A
100
A
20
A
2
J
15
1250
-55 ... +150
150
-55 ... +150
300
260
30..120/6.7..27
V/ns
W
°C
°C
°C
°C
°C
N/lb.
10
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 3mA
V_GS(th)
V_DS = V_GS, I_D = 1mA
I_GSS
V_GS = ±30V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
1100
V
3.5
6.5 V
±200 nA
50 μA
3 mA
260 mΩ
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{Fast recovery diode}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Advantages
z _{Plus 264}TM _{package for clip or spring}
mounting
z _{Space savings}
z _{High power density}
Applications:
z _{High Voltage Switched-mode and}
resonant-mode power supplies
z _{High Voltage Pulse Power Applications}
z _{High Voltage Discharge circuits in}
Lasers Pulsers, Spark Igniters, RF
Generators
z _{High Voltage DC-DC converters}
z _{High Voltage DC-AC inverters}
© 2008 IXYS CORPORATION, All rights reserved
DS99849B(03/08)