IXFB38N100Q2 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET TM Power MOSFETs

HiPerFET^TM
IXFB38N100Q2
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, Low Q_g, Low Intrinsic R_g
High dV/dt, Low t_rr
V_DSS =
I_D25 =
R_DS(on)=
1000 V
38 A
0.25 Ω
t_rr ≤ 300 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
F_c
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
PLUS 264^TM (IXFB)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting Force
Maximum Ratings
1000
1000
± 30
± 40
38
152
38
60
5.0
20
V
V
V
V
A
A
A
mJ
J
V/ns
890
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
30...120/7.5...27 N/lb
10
g
Test Conditions
V_GS = 0 V, I_D = 1mA
V_DS = V_GS, I_D =8 mA
V_GS = ± 30 V, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = 0.5 • I_D25
Note 1
Characteristic Values
(T_J = 25°C unless otherwise specified)
min. typ. max.
1000
V
2.5
5.5 V
± 200 nA
T_J = 25°C
T_J = 125°C
50 μA
3 mA
0.25 Ω
G
D
S
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
z _{Double metal process for low gate}
resistance
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
z _{Fast intrinsic rectifier}
Applications
z _{DC-DC converters}
z _{Switched-mode and resonant-mode}
power supplies, >500kHz switching
z _{DC choppers}
z _{Pulsegeneration}
z _{Laser drivers}
Advantages
z _{PLUS 264}TM _{package for clip or spring}
mounting
z _{Space savings}
z _{High power density}
© 2005 IXYS All rights reserved
DS98949E(09/05)