IXFB30N120P Datasheet, PDF (1/5 Pages) IXYS Corporation – Polar HiPerFET Power MOSFET

Polar^TM HiPerFET^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFB30N120P
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque
Maximum Ratings
1200
V
1200
V
± 30
V
± 40
V
30
A
75
A
15
A
2.0
J
15
1250
-55 ... +150
150
-55 ... +150
300
260
30..120/6.7..27
10
V/ns
W
°C
°C
°C
°C
°C
N/lb.
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 3mA
V_GS(th)
V_DS = V_GS, I_D = 1mA
I_GSS
V_GS = ± 30V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
1200
V
3.5
6.5 V
± 300 nA
50 μA
5.0 mA
350 mΩ
V_DSS =
I_D25 =
≤ R_DS(on)
t_rr
≤
1200V
30A
350mΩ
300ns
PLUS264^TM
G
D
S
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z _{Fast Intrinsic Diode}
z _{Avalanche Rated}
z _{Low RDS(ON) and QG}
z _{Low Package Inductance}
Advantages
z _{Plus 264}TM _{Package for Clip or Spring}
Mounting
z _{High Power Density}
z _{Easy to Mount}
z _{Space Savings}
Applications
z _{High Voltage Switch-Mode and}
Resonant-Mode Power Supplies
z _{High Voltage Pulse Power}
Applications
z _{High Voltage Discharge Circuits in}
Laser Pulsers
Spark Igniters, RF Generators
z _{High Voltage DC-DC Coverters}
z _{High Voltage DC-AC Inverters}
© 2010 IXYS CORPORATION, All Rights Reserved
DS99825B(02/10)