IXFB300N10P Datasheet, PDF (1/4 Pages) IXYS Corporation – Polar Power MOSFET HiPerFET

Preliminary Technical Information
Polar^TM Power MOSFET
HiPerFET^TM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFB300N10P
V_DSS = 100V
I_D25 = 300A
R_DS(on) ≤ 5.5mΩ
t_rr
≤ 200ns
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_LRMS
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
F_C
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
Leads Current Limit, RMS
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 175°C
T_C = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting force
Maximum Ratings
100
V
100
V
±20
V
±30
V
300
A
75
A
900
A
100
A
3
J
20
1500
-55 ... +175
175
-55 ... +175
300
260
30..120/6.7..27
V/ns
W
°C
°C
°C
°C
°C
N/lb.
10
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 3mA
V_GS(th)
V_DS = V_GS, I_D = 8mA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 150°C
R_DS(on)
V_GS = 10V, I_D = 50A, Note 1
Characteristic Values
Min. Typ. Max.
100
V
3.0
5.0 V
±200 nA
25 μA
1.5 mA
5.5 mΩ
PLUS264^TM (IXFB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• Fast intrinsic diode
• Avalanche Rated
• Low R_DS(ON) and Q_G
• Low package inductance
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
z _{Low gate drive requirement}
Applications
• DC-DC coverters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC and DC motor drives
• Uninterrupted power supplies
• High speed power switching
applications
© 2008 IXYS CORPORATION, All rights reserved
DS100015(07/08)