IXFB100N50Q3 Datasheet, PDF (1/5 Pages) IXYS Corporation – HiperFET Power MOSFET Q3-Class

Advance Technical Information
HiperFET^TM
Power MOSFET
Q3-Class
IXFB100N50Q3
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
V_DSS =
I_D25 =
≤ R_DS(on)
t_rr
≤
500V
100A
49mΩ
250ns
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
Maximum Ratings
500
V
500
V
±30
V
±40
V
100
A
300
A
100
A
5
J
50
V/ns
1560
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
30..120/6.7..27
N/lb.
10
g
PLUS264^TM
G
D
S
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z _{Low Intrinsic Gate Resistance}
z _{Low Package Inductance}
z _{Fast Intrinsic Rectifier}
z _{Low RDS(on) and QG}
Advantages
z _{High Power Density}
z _{Easy to Mount}
z _{Space Savings}
Symbol
Test Conditions
(T_J = 25°C Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 3mA
V_GS(th)
V_DS = V_GS, I_D = 8mA
I_GSS
V_GS = ±30V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
500
V
3.5
6.5 V
±200 nA
50 μA
2.5 mA
49 mΩ
Applications
z _{DC-DC Converters}
z _{Battery Chargers}
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{DC Choppers}
z _{Temperature and Lighting Controls}
© 2011 IXYS CORPORATION, All Rights Reserved
DS100309(03/11)