IXFB100N50P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET ^{IXFB 100N50P}
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V = 500 V
DSS
I = 100 A
D25
≤ R_DS(on) 49 mΩ
t_rr
≤ 200 ns
Symbol
V_DSS
V_DGR
V
GSS
V_GSM
I_D25
I_DRMS
I
DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
F_C
Weight
Test Conditions
T_J = 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25° C
External lead current limit
T
C
=
25°
C,
pulse
width
limited
by
T
JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 2 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting force
Maximum Ratings PLUS264^TM (IXFB)
500
V
500
V
±30
±40
100
75
250
100
100
5
20
1250
-55 ... +150
150
-55 ... +150
300
260
30..120/7.5...2.7
10
V
V
G
D
S
A
A
A _{G = Gate}
A ^{S = Source}
D = Drain
TAB = Drain
(TAB)
mJ
J
V/ns
W
°C
°C
°C
Features
l _{International standard packages}
l _{Fast recovery diode}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
°C
°C Advantages
N/lb _{l Plus 264TM package for clip or spring}
g ^{l Space savings}
l _{High power density}
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 3 mA
Characteristic Values
Min. Typ. Max.
500
V
V
GS(th)
V = V , I = 8 mA
DS
GS D
3.0
5.0 V
I_GSS
V_GS = ±30 V_DC, V_DS = 0
±200 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125° C
25 µA
2000 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25, Note 1
49 m Ω
© 2006 IXYS All rights reserved
DS99496E(01/06)