IXFA6N120P Datasheet, PDF (1/4 Pages) IXYS Corporation – Polar HiPerFET Power MOSFET

Advance Technical Information
Polar^TM HiPerFET^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFA6N120P
IXFP6N120P
IXFH6N120P
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220 &TO-247)
TO-263
TO-220
TO-247
Maximum Ratings
1200
V
1200
V
±30
V
±40
V
6
A
18
A
3
A
300
mJ
10
V/ns
250
W
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
2.5
3.0
6.0
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250µA
V_GS(th)
V_DS = V_GS, I_D = 1mA
I_GSS
V_GS = ±30V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
1200
V
2.5
5.0 V
±100 nA
10 µA
1 mA
2.4 Ω
V_DSS =
I_D25 =
≤ R_DS(on)
1200V
6A
2.4Ω
TO-263 AA (IXFA)
G
S
D (Tab)
TO-220AB (IXFP)
GD _S
TO-247 (IXFH)
D (Tab)
G
D
S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z _{International Standard Packages}
z _{Dynamic dv/dt Rating}
z _{Avalanche Rated}
z _{Fast Intrinsic Diode}
z _{Low QG}
z _{Low RDS(on)}
z _{Low Drain-to-Tab Capacitance}
z _{Low Package Inductance}
Advantages
z _{Easy to Mount}
z _{Space Savings}
Applications
z _{DC-DC Converters}
z _{Battery Chargers}
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{Uninterrupted Power Supplies}
z _{AC Motor Drives}
z _{High Speed Power Switching}
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100202A(11/09)