IXFA5N100P Datasheet, PDF (1/4 Pages) IXYS Corporation – Polar Power MOSFET HiPerFET

Preliminary Technical Information
Polar^TM Power MOSFET
HiPerFET^TM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFA5N100P
IXFH5N100P
IXFP5N100P
V_DSS =
I_D25 =
≤ R_DS(on)
1000V
5A
2.8Ω
TO-263 (IXFA)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062) from case for 10s
Plastic body for 10s
Mounting torque (TO-220,TO-247)
TO-263
TO-220
TO-247
Maximum Ratings
1000
V
1000
V
±30
V
±40
V
5
A
10
A
5
A
300
mJ
10
V/ns
250
W
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
2.5
3.0
6.0
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 250μA
I_GSS
V_GS = ±30V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
3.0
6.0 V
±100 nA
10 μA
750 μA
2.8 Ω
© 2008 IXYS CORPORATION, All rights reserved
G
S
TO-247 (IXFH)
(TAB)
G
DS
TO-220 (IXFP)
(TAB)
GDS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International standard packages}
z _{Dynamic dv/dt Rating}
z _{Avalanche Rated}
z _{Low RDS(ON), rugged Polar}TM _process
z _{Low QG}
z _{Low Drain-to-Tab capacitance}
z _{Low package inductance}
Advantages
z _{Easy to mount}
z _{Space savings}
Applications:
z _{DC-DC converters}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{Uninterrupted power supplies}
z _{AC motor control}
z _{High speed power switching}
applications
DS99923(07/08)