IXFA4N100Q Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q-Class

HiPerFET^TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q_g, High dv/dt
Preliminary Data Sheet
IXFA 4N100Q
IXFP 4N100Q
V_DSS
I_D25
R_DS(on)
=1000 V
= 4A
= 3.0 W
t_rr £ 250 ns
Symbol
V_DSS
V_DGR
V_GS
V
GSM
I
D25
I
DM
I
AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Symbol
V_DSS
V_GS(th)
I
GSS
I_DSS
R
DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T
C
= 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
T
C
= 25°C
T_C = 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS,
T_J £ 150°C, R_G = 2 W
T_C = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque (TO-220)
TO-220
TO-263
Maximum Ratings
1000
V
1000
V
±20
V
±30
V
4
A
16
A
4
A
20
mJ
700
mJ
5
V/ns
150
W
-55 to +150
°C
150
°C
-55 to +150
°C
300
°C
1.13/10 Nm/lb.in.
4
g
2
g
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
V_GS = 0 V, I_D = 1 mA
V_DS = V_GS, I_D = 1.5 mA
1000
3.0
V
GS
=
±20
V,
DC
V
DS
=
0
V_DS = V_DSS
V =0V
GS
T_J = 25°C
T
J
= 125°C
V = 10 V, I = 0.5 I
GS
D
D25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
V
5.0 V
±100 nA
50 mA
1 mA
3.0 W
TO-220 (IXFP)
GDS
TO-263 (IXFA)
G
S
D (TAB)
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• IXYS advanced low Q_g process
• Low gate charge and capacitances
- easier to drive
- faster switching
• International standard packages
• Low R_{DS (on)}
• Rated for unclamped Inductive load
Switching (UIS)
• Molding epoxies meet UL 94V-0
flammability classification
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98705 (02/04/00)
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