IXFA3N80 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs

HiPerFET^TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, Low Q_g, High dv/dt
Preliminary data sheet
IXFA 3N80
IXFP 3N80
V_DSS
I_D25
R_DS(on)
= 800 V
= 3.6 A
= 3.6 W
t_rr £ 250 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I _DSS
R_DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS,
T_J £ 150°C, R_G = 2 W
T_C = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque (TO-220)
TO-220
TO-263
Maximum Ratings
800
V
800
V
±20
V
±30
V
3.6
A
14.4
A
3.6
A
10
mJ
400
mJ
5
V/ns
100
W
-55 to +150
°C
150
°C
-55 to +150
°C
300
°C
1.13/10 Nm/lb.in.
4
g
2
g
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 1 mA
800
V_DS = V_GS, I_D = 1 mA
2.5
V_GS = ±20 V_DC, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
V
4.5 V
±100 nA
50 mA
1 mA
3.6 W
TO-220 (IXFP)
GDS
TO-263 (IXFA)
D (TAB)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l _{International standard packages}
l _{Low RDS (on)}
l _{Rated for unclamped Inductive load}
Switching (UIS)
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2000 IXYS All rights reserved
98746 (09/00)