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IXFA20N85XHV Datasheet, PDF (1/6 Pages) IXYS Corporation – X-Class HiPerFETTM | |||
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X-Class HiPerFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFA20N85XHV
IXFP20N85X
IXFH20N85X
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Md
Weight
Test Conditions
TJ = 25ï°C to 150ï°C
TJ = 25ï°C to 150ï°C, RGS = 1Mï
Continuous
Transient
Maximum Ratings
850
V
850
V
ï±30
V
ï±40
V
TC = 25ï°C
TC = 25ï°C, Pulse Width Limited by TJM
TC = 25ï°C
TC = 25ï°C
IS ï£ IDM, VDD ï£ VDSS, TJ ï£ 150°C
TC = 25ï°C
20
50
10
800
50
540
-55 ... +150
150
-55 ... +150
A
A
A
mJ
V/ns
W
ï°C
ï°C
ï°C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Force (TO-263HV)
10.65 / 2.2..14.6
Mounting Torque (TO-220 & TO-247)
1.13 / 10
N/lb
Nm/lb.in
TO-263HV
TO-220
TO-247
2.5
g
3.0
g
6.0
g
Symbol
Test Conditions
(TJ = 25ï°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 2.5mA
IGSS
VGS = ï±30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125ï°C
RDS(on)
VGS = 10V, ID = 0.5 ⢠ID25, Note 1
Characteristic Values
Min. Typ. Max.
850
V
3.5
5.5 V
ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï±100 nA
25 ïA
1.5 mA
330 mï
VDSS =
ID25 =
ï£ RDS(on)
850V
20A
330mï
TO-263HV
G
S
D (Tab)
TO-220AB (IXFP)
GD S
TO-247 (IXFH)
D (Tab)
G
DS
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
ï¬ International Standard Packages
ï¬ High Voltage Package
ï¬ Low RDS(ON) and QG
ï¬ Avalanche Rated
ï¬ Low Package Inductance
Advantages
ï¬ High Power Density
ï¬ Easy to Mount
ï¬ Space Savings
Applications
ï¬ Switch-Mode and Resonant-Mode
Power Supplies
ï¬ DC-DC Converters
ï¬ PFC Circuits
ï¬ AC and DC Motor Drives
ï¬ Robotics and Servo Controls
© 2016 IXYS CORPORATION, All Rights Reserved
DS100703C(6/16)
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