IXFA16N50P Datasheet, PDF (1/4 Pages) IXYS Corporation – PolarHV HiperFET Power MOSFET

PolarHV^TM HiperFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFA16N50P
IXFP16N50P
IXFH16N50P
V_DSS =
I_D25 =
R_DS(on) ≤
t_rr
≤
500V
16A
400mΩ
200ns
TO-263
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C R_GS = 1MΩ
Continuous
Transient
Maximum Ratings
500
V
500
V
± 30
V
± 40
V
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS , T_J ≤ 150°C
T_C = 25°C
16
35
16
750
10
300
-55 ... +150
150
-55 ... +150
A
A
A
mJ
V/ns
W
°C
°C
°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 Seconds
300
°C
260
°C
Mounting Torque (TO-220 & TO-247)
1.13 / 10
Mounting Force (TO-263)
10..65 / 2.2..14.6
Nmlb.in.
N/lb.
TO-263
TO-220
TO-247
2.5
g
3.0
g
6.0
g
Symbol
Test Conditions
(T_J = 25°C Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 2.5mA
I_GSS
V_GS = ± 30V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS= 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
500
V
3.0
5.5 V
± 100 nA
15 μA
250 μA
400 mΩ
TO-220
G
S
(TAB)
G _DS
TO-247
(TAB)
GD _S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International Standard Packages}
z _{Avalanche Rated}
z _{Fast Intrinsic Diode}
z _{Low Package Inductance}
Advantages
z _{High Power Density}
z _{Easy to Mount}
z _{Space Savings}
Applications
z _{Switched-Mode and Resonant-Mode}
Power Supplies
z _{DC-DC Converters}
z _{Laser Drivers}
z _{AC and DC Motor Drives}
z _{Robotics and Servo Controls}
© 2009 IXYS CORPORATION, All Rights Reserved
DS99357F(05/09)