IXFA14N60P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV HiperFET Power MOSFET

PolarHV^TM HiperFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFA14N60P
IXFP14N60P
IXFH14N60P
V_DSS =
I_D25 =
R_DS(on) ≤
t_rr
≤
600V
14A
550mΩ
200ns
TO-263
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C R_GS = 1MΩ
Continuous
Transient
Maximum Ratings
600
V
600
V
± 30
V
± 40
V
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS , T_J ≤ 150°C
T_C = 25°C
14
42
14
900
10
300
-55 ... +150
150
-55 ... +150
A
A
A
mJ
V/ns
W
°C
°C
°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
300
°C
260
°C
Mounting Torque (TO-220 & TO-247)
1.13 / 10
Mounting Force (TO-263)
10..65 / 2.2..14.6
Nmlb.in.
N/lb.
TO-263
TO-220
TO-247
2.5
g
3.0
g
6.0
g
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 2.5mA
I_GSS
V_GS = ± 30V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.5 V
± 100 nA
5 μA
500 μA
450 550 mΩ
TO-220
G
S
(TAB)
G _DS
TO-247
(TAB)
GD _S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International standard packages}
z _{Avalanche rated}
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
Applications:
z _{Switched-mode and resonant-mode}
power supplies
z _{DC-DC Converters}
z _{Laser Drivers}
z _{AC and DC motor drives}
z _{Robotics and servo controls}
© 2008 IXYS CORPORATION, All rights reserved
DS99389F(12/08)