IXFA130N10T2 Datasheet, PDF (1/6 Pages) IXYS Corporation – TrenchT2 HiperFET Power MOSFET

Advance Technical Information
TrenchT2^TM HiperFET^TM
Power MOSFET
IXFA130N10T2
IXFP130N10T2
V_DSS =
I_D25 =
R_DS(on) ≤
100V
130A
9.1mΩ
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrnsic Rectifier
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_LRMS
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_sold
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C (Chip Capability)
Lead Current Limit, RMS
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM,, V_DD ≤ V_DSS,T_J ≤ 175°C
T_C = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-220)
TO-263
TO-220
Maximum Ratings
100
V
100
V
± 20
V
± 30
V
130
A
120
A
300
A
65
A
800
mJ
20
360
-55 ... +175
175
-55 ... +175
V/ns
W
°C
°C
°C
300
260
1.13 / 10
2.5
3.0
°C
°C
Nm/lb.in.
g
g
Symbol
Test Conditions
(T_J = 25°C Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 1mA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 150°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Notes 1, 2
Characteristic Values
Min. Typ. Max.
100
V
2.0
4.5 V
±200 nA
10 μA
500 μA
9.1 mΩ
TO-263 AA (IXFA)
G
S
D (Tab)
TO-220AB (IXFP)
GD _S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z _{International Standard Packages}
z _{175°C Operating Temperature}
z _{High Current Handling Capability}
z _{Fast Intrinsic Rectifier}
z _{Dynamic dV/dt Rated}
z _{Low RDS(on)}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{DC-DC Converters}
z _{Battery Chargers}
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{DC Choppers}
z _{AC Motor Drives}
z _{Uninterruptible Power Supplies}
z _{High Speed Power Switching}
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100111(10/09)