IXFA110N15T2 Datasheet, PDF (1/6 Pages) IXYS Corporation – TrenchT2 HiperFET Power MOSFET

Preliminary Technical Information
TrenchT2^TM HiperFET
Power MOSFET
IXFA110N15T2
IXFP110N15T2
V_DSS =
I_D25 =
R_DS(on) ≤
150V
110A
13mΩ
N-Channel Enhancement Mode
Avalanche Rated
TO-263
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_sold
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM,, V_DD ≤ V_DSS,T_J ≤ 175°C
T_C = 25°C
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-263
TO-220
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 250μA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 150°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Notes 1, 2
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Maximum Ratings
150
V
150
V
± 20
V
± 30
V
110
A
300
A
50
A
800
mJ
15
V/ns
480
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
260
1.13 / 10
2.5
3.0
°C
°C
Nm/lb.in.
g
g
Characteristic Values
Min. Typ. Max.
150
V
2.5
4.5 V
±200 nA
5 μA
150 μA
11 13 mΩ
G
S
TO-220
(TAB)
GD _S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International standard packages}
z _{175°C Operating Temperature}
z _{High current handling capability}
z _{Fast intrinsic Rectifier}
z _{Dynamic dV/dt rated}
z _{Low RDS(on)}
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
Applications
z _{DC-DC converters}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{AC motor drives}
z _{Uninterruptible power supplies}
z _{High speed power switching}
applications
DS100093(12/08)