IXFA10N80P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-263 AA (IXFA)
IXFA10N80P
IXFP10N80P
IXFQ10N80P
IXFH10N80P
TO-220AB (IXFP)
V_DSS =
I_D25 =
R_DS(on) ≤
t_rr
≤
800V
10A
1.1Ω
250ns
TO-3P (IXFQ)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
G
S
D (TAB)
GD _S
D (TAB)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220,TO-247)
TO-263
TO-220
TO-3P
TO-247
Maximum Ratings
800
V
800
V
±30
V
±40
V
10
A
30
A
5
A
600
mJ
10
V/ns
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13 / 10
2.5
3.0
5.5
6.0
Nm/lb.in.
g
g
g
g
Symbol
Test Conditions
(T_J = 25°C Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 2.5mA
I_GSS
V_GS = ± 30V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS= 0V
T_J = 150°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
800
V
3.0
5.5 V
±100 nA
25 μA
500 μA
1.1 Ω
G
D
S
TO-247 (IXFH)
D (TAB)
G
D
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International Standard Packages}
z _{Avalanche Rated}
z _{Low Package Inductance}
z _{Easy to Drive and to Protect}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{Switched-Mode and Resonant-Mode}
Power Supplies
z _{DC-DC Converters}
z _{Laser Drivers}
z _{AC and DC Motor Drives}
z _{Robotics and Servo Controls}
© 2009 IXYS CORPORATION, All Rights Reserved
DS99432F(08/09)