IXFA102N15T Datasheet, PDF (1/6 Pages) IXYS Corporation – Trench Gate Power MOSFET HiperFET

Trench Gate Power
MOSFET HiperFET^TM
N-Channel Enhancement Mode
Avalanche Rated
IXFA102N15T
IXFH102N15T
IXFP102N15T
V_DSS =
I_D25 =
R_DS(on) ≤
t_rr
≤
150V
102A
18mΩ
120ns
TO-263 (IXFA)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_LRMS
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C R_GS = 1MΩ
Continuous
Transient
Maximum Ratings
150
V
150
V
± 20
V
± 30
V
T_C = 25°C
Lead Current Limit, RMS
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS , T_J ≤ 175°C
T_C = 25°C
102
75
300
51
750
20
455
-55 ... +175
175
-55 ... +175
A
A
A
A
mJ
V/ns
W
°C
°C
°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
300
°C
260
°C
Mounting Torque (TO-220 & TO-247)
1.13 / 10
Mounting Force (TO-263)
10..65 / 2.2..14.6
Nmlb.in.
N/lb.
TO-263
TO-220
TO-247
2.5
g
3.0
g
6.0
g
Symbol
Test Conditions
(T_J = 25°C Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 1mA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS= 0V
T_J = 150°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
150
V
2.5
5.0 V
± 200 nA
5 μA
750 μA
18 mΩ
G
S
TO-220 (IXFP)
(TAB)
G _DS
TO-247 (IXFH)
(TAB)
GD _S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International Standard Packages}
z _{Avalanche Rated}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{DC-DC Converters}
z _{Battery Chargers}
z _{Switched-Mode and Resonant-Mode}
Power Supplies
z _{DC Choppers}
z _{AC Motor Drives}
z _{Uninterruptible Power Supplies}
z _{High Speed Power Switching}
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100045A(04/09)