IXER60N120 Datasheet, PDF (1/2 Pages) IXYS Corporation – NPT3 IGBT

Advanced Technical Information
NPT³ IGBT
in ISOPLUS 247^TM
IXER 60N120
I
= 95 A
C25
V_CES
= 1200 V
V_{CE(sat) typ.} = 2.1 V
C
ISOPLUS 247^TM
E153432
G
G
C
E
E
Isolated Backside*
G = Gate C = Collector
*Patent pending
E = Emitter
IGBT
Symbol
V_CES
V_GES
I_C25
I_C90
I_CM
V_CEK
t_SC
(SCSOA)
P_tot
Symbol
V
CE(sat)
V_GE(th)
I_CES
I_GES
t_d(on)
t
r
t_d(off)
t
f
E_on
E_off
C
ies
Q_Gon
R_thJC
R
thJH
Conditions
Maximum Ratings
T_VJ = 25°C to 150°C
1200
V
± 20
V
T_C = 25°C
T_C = 90°C
95
A
60
A
V_GE
=
±15
V;
R
G
=
22
Ω;
T_VJ
=
125°C
RBSOA, Clamped inductive load; L = 100 µH
100
A
V_CES
V_CE = 900 V; V_GE = ±15 V; R_G = 22 Ω; T_VJ = 125°C
10
µs
non-repetitive
T_C = 25°C
375
W
Conditions
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
I
C
=
60
A;
V
GE
=
15
V;
T_VJ
=
25°C
T_VJ = 125°C
I_C = 2 mA; V_GE = V_CE
V_CE = V_CES; V_GE = 0 V; T_VJ = 25°C
T_VJ = 125°C
V_CE = 0 V; V_GE = ± 20 V
Inductive load, T_VJ = 125°C
V = 600 V; I = 60 A
CE
C
V_GE = ±15 V; R_G = 22 Ω
2.1 2.7 V
2.5
V
4.5
6.5 V
0.1 mA
0.1
mA
200 nA
150
ns
60
ns
700
ns
50
ns
7.2
mJ
6.0
mJ
V = 25 V; V = 0 V; f = 1 MHz
CE
GE
V_CE = 600 V; V_GE = 15 V; I_C = 50 A
3.8
500
0.66
nF
nC
0.33 K/W
K/W
Features
• NPT³ IGBT
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
• ISOPLUS 247^TM package
- isolated back surface
- low coupling capacity between pins
and heatsink
- high reliability
- industry standard outline
Applications
• single switches
and with complementary free wheeling
diodes
• choppers
• phaselegs, H bridges, three phase
bridges e.g. for
- power supplies, UPS
- AC, DC and SR drives
- induction heating
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IXYS Semiconductor GmbH
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Phone: [phone], Fax: [phone]
1-2
IXYS Corporation
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Phone: [phone], Fax: [phone]