IXER35N120D1_06 Datasheet, PDF (1/4 Pages) IXYS Corporation – NPT3 IGBT with Diode in ISOPLUS247

NPT³ IGBT
with Diode
in ISOPLUS247^TM
IXER 35N120D1
I_C25
= 50A
V_CES =1200 V
V = _{CE(sat) typ.} 2.2 V
C
ISOPLUS 247^TM
E153432
G
G
C
E
E
Isolated Backside
G = Gate C = Collector E = Emitter
IGBT
Symbol
V_CES
V_GES
I_C25
I_C90
I_CM
V_CEK
t
SC
(SCSOA)
P_tot
Symbol
V_CE(sat)
V
GE(th)
I_CES
I_GES
t
d(on)
t_r
t_d(off)
t_f
E_on
E_off
C_ies
Q_Gon
R
thJC
R_thCH
Conditions
Maximum Ratings
t _{TVJ = 25°C to 150°C}
1200
V
± 20
V
u _{TC = 25°C}
T_C = 90°C
50
A
32
A
o _{VGE = ±15 V; RG = 39 Ω; TVJ = 125°C}
- _{RBSOA, Clamped inductive load; L = 100 µH}
50
A
V_CES
V
CE
=
900V;
V_GE
=
±15
V;
R
G
=
39
Ω;
T_VJ
=
125°C
e _{non-repetitive}
10
µs
T_C = 25°C
200
W
a ^{s Conditions}
Characteristic Values
Features
• NPT³ IGBT
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
• HiPerFRED^TM diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
• ISOPLUS 247^TM package
- isolated back surface
- low coupling capacity between pins
and heatsink
- high reliability
- industry standard outline
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
h IC = 35 A; VGE = 15 V; TVJ = 25°C
T_VJ = 125°C
I = 1 mA; V = V
p C
GE
CE
2.2 2.8 V
2.6
V
4.5
6.5 V
Applications
• single switches
• choppers with complementary free
wheeling diodes
• phaselegs, H bridges, three phase
V_CE = V_CES; V_GE = 0 V; T_VJ = 25°C
T_VJ = 125°C
0.4 mA
0.4
mA
bridges e.g. for
- power supplies, UPS
- AC, DC and SR drives
V_CE = 0 V; V_GE = ± 20 V
200 nA ^{- induction heating}
Inductive load, T_VJ = 125°C
V_CE = 600 V; I_C = 35 A
V
GE
=
±15
V;
R
G
=
39
Ω
85
ns
50
ns
440
ns
50
ns
5.4
mJ
2.6
mJ
V_CE = 25 V; V_GE = 0 V; f = 1 MHz
V_CE = 600 V; V_GE = 15 V; I_C = 35 A
with heatsink compound
2
nF
150
nC
0.6 K/W
0.3
K/W
© 2006 IXYS All rights reserved
1-4