IXER20N120 Datasheet, PDF (1/4 Pages) IXYS Corporation – NPT3 IGBT in ISOPLUS247

NPT³ IGBT
in ISOPLUS247™
IXER 20N120
IXER 20N120D1
I_C25
= 36 A
V_CES = 1200 V
V = _CE(sat)typ 2.4 V
C
C
ISOPLUS247™
G
G
E
IXER 20N120
E
IXER 20N120D1
G
C
E
G = Gate

Isolated Backside
C = Collector E = Emitter
IGBT
Symbol
V_CES
V_GES
I_C25
I_C90
I_CM
V_CEK
t_SC
(SCSOA)
P_tot
Symbol
V_CE(sat)
V_GE(th)
I_CES
I_GES
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
C_ies
Q_Gon
R_thJC
R_thCH
Features
Conditions
T_VJ = 25°C to 150°C
Maximum Ratings
1200 V
t• NPT3 IGBT
- low saturation voltage
- positive temperature coefficient for
T_C = 25°C
u _{TC = 90°C}
V_GE = ±15 V; R_G = 68 W; T_VJ = 125°C
RBSOA Clamped inductive load; L = 100 µH
o _{VCE = 900 V; VGE = ±15 V; RG = 68 W}
- _{TVJ = 125°C; non-repetitive}
T_C = 25°C
± 20
V
29 A
19 A
40 A
V_CES
10 µs
130 W
s ^{e Conditions}
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
a IC = 20 A; VGE = 15 V; TVJ = 25°C
T_VJ = 125°C
I_C = 0.6 mA; V_GE = V_CE
h VCE = VCES; VGE = 0 V; TVJ = 25°C
T_VJ = 125°C
p V_CE = 0 V; V_GE = ± 20 V
2.4
2.8
4.5
0.2
2.8
V
V
6.5
V
0.2 mA
mA
200 nA
easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
• HiPerFRED™ diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
• ISOPLUS247™ package
- isolated back surface
- low coupling capacity between pins
and heatsink
- high reliability
- industry standard outline
Applications
• single switches
• choppers with complementary free
wheeling diodes
• phaselegs, H bridges, three phase
bridges e.g. for
- power supplies, UPS
Inductive load
205
ns
- AC, DC and SR drives
105
ns
- induction heating
L = 100 µH; T_VJ = 125°C
V_CE = 600 V; I_C = 25 A
V_GE = ±15 V; R_G = 68 Ω
320
ns
175
ns
4.1
mJ
1.5
mJ
V_CE = 25 V; V_GE = 0 V; f = 1 MHz
V_CE = 600 V; V_GE = 15 V; I_C = 20 A
with heatsink compound
1.2
nF
100
nC
0.96 K/W
0.5
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
20080118a
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