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IXEH25N120 Datasheet, PDF (1/4 Pages) IXYS Corporation – NPT3 IGBT
NPT3 IGBT
IXEH 25N120
IXEH 25N120D1
IC25
= 36 A
VCES = 1200 V
VCE(sat) typ = 2.6 V
C
G
E
IXEH 25N120
C
G
TO-247 AD
G
E
C
E
IXEH 25N120D1
C (TAB)
IGBT
Symbol
VCES
VGES
IC25
IC90
ICM
VCEK
t
SC
(SCSOA)
Ptot
Symbol
VCE(sat)
VGE(th)
ICES
IGES
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
QGon
RthJC
Conditions
Maximum Ratings
tFeatures
• NPT3 IGBT
- positive temperature coefficient of
TVJ = 25°C to 150°C
1200
V
± 20
V
u TC = 25°C
TC = 90°C
36
A
24
A
o VGE = ±15 V; RG = 68 Ω; TVJ = 125°C
60
A
- RBSOA, Clamped inductive load; L = 100 µH
VCES
V
CE
=
900V;
VGE
=
±15
V;
R
G
=
68
Ω;
TVJ
=
125°C
10
µs
e non-repetitive
TC = 25°C
200
W
a s Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
h IC = 25 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
p IC = 0.6 mA; VGE = VCE
2.6 3.2 V
3.2
V
4.5
6.5 V
saturation voltage for easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
• optional HiPerFREDTM diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
• TO-247 package
- industry standard outline
- epoxy meets UL 94V-0
Applications
• AC drives
• DC drives and choppers
• Uninteruptible power supplies (UPS)
• switched-mode and resonant-mode
power supplies
• inductive heating, cookers
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
0.2 mA
0.2
mA
VCE = 0 V; VGE = ± 20 V
200 nA
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 20 A
VGE = ±15 V; RG = 68 Ω
205
ns
105
ns
320
ns
175
ns
4.1
mJ
1.5
mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 20 A
1.2
nF
100
nC
0.63 K/W
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