IXDR35N60BD1 Datasheet, PDF (1/4 Pages) IXYS Corporation – IGBT with optional Diode

IXDR 35N60 BD1
IGBT
with optional Diode
High Speed,
Low Saturation Voltage
V_CES = 600 V
I_C25
= 38 A
V = _{CE(sat) typ} 2.2 V
C
ISOPLUS 247^TM
G
E
G
C
E
Isolated back surface
G = Gate,
C = Collector ,
E = Emitter
TAB = Collector
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C90
I_CM
RBSOA
t_SC
(SCSOA)
P_C
T_J
T_stg
V_ISOL
F_C
Weight
Symbol
V
(BR)CES
V_GE(th)
I_CES
I
GES
V_CE(sat)
Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 20 kΩ
Continuous
Transient
T_C = 25°C
T_C = 90°C
T_C = 90°C, t_p =1 ms
V_GE= ±15 V, T_J = 125°C, R_G = 10 Ω
Clamped inductive load, L = 30 µH
V_GE= ±15 V, V_CE = 600 V, T_J = 125°C
R_G = 10 Ω, non repetitive
T_C = 25°C
IGBT
Diode
50/60 Hz RMS; I_ISOL ≤ 1 mA
mounting force with clip
typical
Maximum Ratings
600
V
600
V
±20
V
±30
V
38
A
24
A
48
A
I_CM = 110
A
V_CEK < V_CES
10
µs
125
W
50
W
-55 ... +150
°C
-55 ... +150
°C
2500
V~
20...120
N
6
g
Conditions
V =0V
GE
I_C = 0.7 mA, V_CE = V_GE
V_CE = V_CES
V = 0 V, V = ± 20 V
CE
GE
I_C = 35 A, V_GE = 15 V
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
600
V
3
5V
T_J = 25°C
T_J = 125°C
0.1 mA
1
mA
± 500 nA
2.2
2.7 V
Features
● _{NPT IGBT technology}
● _{low switching losses}
● _{low tail current}
● _{no latch up}
● _{short circuit capability}
● _{positive temperature coefficient for}
easy paralleling
● _{MOS input, voltage controlled}
● _{optional ultra fast diode}
● _{Epoxy meets UL 94V-0}
● _{Isolated and UL registered E153432}
Advantages
● _{DCB Isolated mounting tab}
● _{Meets TO-247AD package Outline}
● _{Package for clip or spring mounting}
● _{Space savings}
● _{High power density}
Typical Applications
● _{AC motor speed control}
● _{DC servo and robot drives}
● _{DC choppers}
● _{Uninterruptible power supplies (UPS)}
● _{Switch-mode and resonant-mode}
power supplies
IXYS reserves the right to change limits, test conditions and dimensions
© 2006 IXYS All rights reserved
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