IXDR30N120 Datasheet, PDF (1/4 Pages) IXYS Corporation – High Voltage IGBT with optional Diode ISOPLUSTM package

High Voltage IGBT
IXDR 30N120 D1
with optional Diode
IXDR 30N120
ISOPLUS^TM package
(Electrically Isolated Back Side)
V_CES
= 1200 V
I_C25
= 50 A
V_{CE(sat) typ} = 2.4 V
Short Circuit SOA Capability
C
Square RBSOA
G
E
IXDR 30N120
C
G
E
IXDR 30N120 D1
ISOPLUS 247^TM
E153432
G
C
E
Isolated Backside*
G = Gate C = Collector
*Patent pending
E = Emitter
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C90
I_CM
RBSOA
t_SC
(SCSOA)
P_C
T_J
T_stg
V_ISOL
Weight
Symbol
V_(BR)CES
V
GE(th)
I_CES
I_GES
V
CE(sat)
Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 20 kW
Continuous
Transient
T_C = 25°C
T_C = 90°C
T_C = 90°C, t_p = 1 ms
V_GE = ±15 V, T_J = 125°C, R_G = 47 W
Clamped inductive load, L = 30 mH
V_GE = ±15 V, V_CE = V_CES, T_J = 125°C
R_G = 47 W, non repetitive
T_C = 25°C
IGBT
Diode
50/60 Hz, RMS I_ISOL £ 1 mA
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
50
A
30
A
60
A
I_CM = 50
A
V_CEK < V_CES
10
µs
200
W
95
W
-55 ... +150
°C
-55 ... +150
°C
2500
V~
6
g
Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GE = 0 V
I = 1 mA, V = V
C
CE
GE
V_CE = V_CES
T_J = 25°C
T_J = 125°C
V_CE = 0 V, V_GE = ± 20 V
I = 30 A, V = 15 V
C
GE
1200
V
4.5
6.5 V
1.5 mA
2.5
mA
± 500 nA
2.4
2.9 V
Features
• NPT IGBT technology
- high switching speed
- low switching losses
- square RBSOA, no latch up
- high short circuit capability
- positive temperature coefficient for
easy paralleling
- MOS input, voltage controlled
- fast recovery epitaxial diode
q _{Epoxy meets UL 94V-0}
q _{Isolated and UL registered E153432}
Advantages
• DCB Isolated mounting tab
• Meets TO-247AD package Outline
• Package for clip or spring mounting
• Space savings
• High power density
Typical Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninteruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
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