IXDP35N60B Datasheet, PDF (1/4 Pages) IXYS Corporation – IGBT with optional Diode

IGBT
with optional Diode
High Speed,
Low Saturation Voltage
IXDP 35N60 B V_CES = 600 V
IXDH 35N60 B I_C25
= 60 A
IXDH 35N60 BD1 V = _{CE(sat) typ} 2.1 V
C
G
C
TO-247 AD
IXDH ...
G
E
E
IXDH 35N60 B IXDH 35N60 BD1
IXDP 35N60 B
Symbol
Conditions
Maximum Ratings
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C90
I_CM
RBSOA
t_SC
(SCSOA)
P_C
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 20 kW
Continuous
Transient
T_C = 25°C
T_C = 90°C
T_C = 90°C, t_p =1 ms
V_GE= ±15 V, T_J = 125°C, R_G = 10 W
Clamped inductive load, L = 30 µH
V_GE= ±15 V, V_CE = 600 V, T_J = 125°C
R_G = 10 W, non repetitive
T_C = 25°C
IGBT
Diode
600
V
600
V
±20
V
±30
V
60
A
35
A
70
A
I_CM = 110
A
V_CEK < V_CES
10
µs
250
W
80
W
T_J
T_stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
-55 ... +150
°C
-55 ... +150
°C
300
°C
M_d
Mounting torque TO-220
TO-247
0.4 - 0.6
Nm
0.8 - 1.2
Nm
Weight
6
g
G
C
E
C (TAB)
TO-220 AB
IXDP ...
G
C
E
G = Gate,
C = Collector ,
C (TAB)
E = Emitter
TAB = Collector
Features
q _{NPT IGBT technology}
q _{low switching losses}
q _{low tail current}
q _{no latch up}
q _{short circuit capability}
q _{positive temperature coefficient for}
easy paralleling
q _{MOS input, voltage controlled}
q _{optional ultra fast diode}
q _{International standard package}
Advantages
q _{Space savings}
q _{High power density}
Symbol
V_(BR)CES
V_GE(th)
I
CES
I_GES
V_CE(sat)
Conditions
V_GE = 0 V
I_C = 0.7 mA, V_CE = V_GE
V =V
CE
CES
V_CE = 0 V, V_GE = ± 20 V
I_C = 35 A, V_GE = 15 V
Characteristic Values
(T = 25°C, unless otherwise specified)
J
min. typ. max.
600
V
3
5V
T = 25°C
J
T_J = 125°C
0.1 mA
1
mA
± 500 nA
2.2
2.7 V
Typical Applications
q _{AC motor speed control}
q _{DC servo and robot drives}
q _{DC choppers}
q _{Uninteruptible power supplies (UPS)}
q _{Switch-mode and resonant-mode}
power supplies
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