IXDP20N60B Datasheet, PDF (1/4 Pages) IXYS Corporation – High Voltage IGBT with optional Diode

High Voltage IGBT
with optional Diode
High Speed,
Low Saturation Voltage
IXDP 20N60 B V_CES = 600 V
IXDP 20N60 BD1 I_C25
= 32 A
V = _{CE(sat) typ} 2.2 V
C
C
TO-220 AB
G
G
E
E
IXDP 20N60B IXDP 20N60B D1
G
C
E
G = Gate,
C = Collector ,
C (TAB)
E = Emitter
TAB = Collector
Symbol
Conditions
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C90
I_CM
RBSOA
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 20 kW
Continuous
Transient
T_C = 25°C
T_C = 90°C
T_C = 90°C, t_p =1 ms
V_GE= ±15 V, T_J = 125°C, R_G = 22 W
Clamped inductive load, L = 30 µH
t_SC
(SCSOA)
P_C
V_GE= ±15 V, V_CE = 600 V, T_J = 125°C
R_G = 22 W, non repetitive
T_C = 25°C
IGBT
Diode
T_J
T_stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M_d
Weight
Mounting torque
Maximum Ratings
600
V
600
V
±20
V
±30
V
32
A
20
A
40
A
I_CM = 60
A
V_CEK < V_CES
10
µs
140
W
50
W
-55 ... +150
°C
-55 ... +150
°C
300
°C
0.4 - 0.6
Nm
2
g
Features
q _{NPT IGBT technology}
q _{low switching losses}
q _{low tail current}
q _{no latch up}
q _{short circuit capability}
q _{positive temperature coefficient for}
easy paralleling
q _{MOS input, voltage controlled}
q _{optional ultra fast diode}
q _{International standard package}
Advantages
q _{Space savings}
q _{High power density}
Typical Applications
q _{AC motor speed control}
q _{DC servo and robot drives}
q _{DC choppers}
q _{Uninteruptible power supplies (UPS)}
q _{Switch-mode and resonant-mode}
power supplies
Symbol
V_(BR)CES
V_GE(th)
I_CES
I
GES
V
CE(sat)
Conditions
V_GE = 0 V
I_C = 0.4 mA, V_CE = V_GE
V_CE = V_CES
V = 0 V, V = ± 20 V
CE
GE
I = 20 A, V = 15 V
C
GE
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
600
V
3
5V
T_J = 25°C
T_J = 125°C
0.1 mA
0.7
mA
± 500 nA
2.2
2.8 V
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