IXDN55N120D1 Datasheet, PDF (1/4 Pages) IXYS Corporation – High Voltage IGBT with optional Diode

IXDN 55N120 D1
High Voltage IGBT
with optional Diode
Short Circuit SOA Capability
Square RBSOA
V_CES = 1200 V
I_C25
= 100 A
V = _{CE(sat) typ} 2.3 V
C
miniBLOC, SOT-227 B
E153432
E
G
G
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C90
I_CM
RBSOA
t_SC
(SCSOA)
P_C
V_ISOL
T_J
T_stg
M_d
Weight
Symbol
V_(BR)CES
V_GE(th)
I
CES
I
GES
V_CE(sat)
E
Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 20 kΩ
Continuous
Transient
T_C = 25°C
T_C = 90°C
T_C = 90°C, t_p = 1 ms
V_GE = ±15 V, T_J = 125°C, R_G = 22 Ω
Clamped inductive load, L = 30 µH
V_GE = ±15 V, V_CE = V_CES, T_J = 125°C
R_G = 22 Ω, non repetitive
T_C = 25°C
IGBT
Diode
50/60 Hz; I_ISOL ≤ 1 mA
Mounting torque
Terminal connection torque (M4)
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
100
A
62
A
124
A
I_CM = 100
A
V_CEK < V_CES
10
µs
450
W
220
W
2500
V~
-40 ... +150
°C
-40 ... +150
°C
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Conditions
Characteristic Values
(T = 25°C, unless otherwise specified)
J
min. typ. max.
V_GE = 0 V
I_C = 2 mA, V_CE = V_GE
V =V
CE
CES
T = 25°C
J
T_J = 125°C
V = 0 V, V = ± 20 V
CE
GE
I_C = 55 A, V_GE = 15 V
1200
V
4.5
6.5 V
3.8 mA
6
mA
± 500 nA
2.3
2.8 V
E
C
E = Emitter ①, C = Collector
G = Gate,
E = Emitter ①
① Either Emitter terminal can be used as
Main or Kelvin Emitter
Features
● _{NPT IGBT technology}
● _{low saturation voltage}
● _{low switching losses}
● _{square RBSOA, no latch up}
● _{high short circuit capability}
● _{positive temperature coefficient for}
easy paralleling
● _{MOS input, voltage controlled}
● _{optional ultra fast diode}
● _{International standard package}
miniBLOC
Advantages
● _{Space savings}
● _{Easy to mount with 2 screws}
● _{High power density}
Typical Applications
● _{AC motor speed control}
● _{DC servo and robot drives}
● _{DC choppers}
● _{Uninteruptible power supplies (UPS)}
● _{Switch-mode and resonant-mode}
power supplies
© 2002 IXYS All rights reserved
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