IXDN430MCI Datasheet, PDF (1/12 Pages) IXYS Corporation – 30 Amp Low-Side Ultrafast MOSFET / IGBT Driver

IXDN430 / IXDI430 / IXDD430 / IXDS430
30 Amp Low-Side Ultrafast MOSFET / IGBT Driver
Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOS^TM processes
• Latch-Up Protected
• High Peak Output Current: 30A Peak
• Wide Operating Range: 8.5V to 35V
• Under Voltage Lockout Protection
• Ability to Disable Output under Faults
• High Capacitive Load
Drive Capability: 5600 pF in <25ns
• Matched Rise And Fall Times
• Low Propagation Delay Time
• Low Output Impedance
• Low Supply Current
Applications
• Driving MOSFETs and IGBTs
• Motor Controls
• Line Drivers
• Pulse Generators
• Local Power ON / OFF Switch
• Switch Mode Power Supplies (SMPS)
• DC to DC Converters
• Pulse Transformer Driver
• Limiting di/dt Under Short Circuit
• Class D Switching Amplifiers
General Description
The IXDN430/IXDI430/IXDD430/IXDS430 are high speed high current
gate drivers specifically designed to drive MOSFETs and IGBTs to their
minimum switching time and maximum practical frequency limits. The
IXD_430 can source and sink 30A of peak current while producing
voltage rise and fall times of less than 30ns. The input of the drivers are
compatible with TTL or CMOS and are fully immune to latch up over the
entire operating range. Designed with small internal delays, cross
conduction/current shoot-through is virtually eliminated in all
configurations. Their features and wide safety margin in operating
voltage and power make the drivers unmatched in performance and
value.
The IXD_430 incorporates a unique ability to disable the output under
fault conditions. The standard undervoltage lockout voltages are 11.75V
for the IXD_430 parts and 8.5V for the IXD_430M parts. ULVO can be
set to either level in the IXDS430 with the UNSEL input line. When a
logical low is forced into the Enable inputs, both final output stage
MOSFETs (NMOS and PMOS) are turned off. As a result, the output
of the IXDD430 enters a tristate mode and enables a Soft Turn-Off of the
MOSFET when a short circuit is detected. This helps prevent damage
that could occur to the MOSFET if it were to be switched off abruptly due
to a dv/dt over-voltage transient.
The IXDN430 is configured as a noninverting gate driver, and the IXDI430
is an inverting gate driver. The IXDS430 can be configured either as a
noninverting or inverting driver. The IXD_430 are available in the standard
28-pin SIOC (SI-CT), 5-pin TO-220 (CI), and in the TO-263 (YI) surface
mount packages. CT or 'Cool Tab' for the 28-pin SOIC package refers
to the backside metal heatsink tab.
Ordering Information
Part Num ber
IX D D 430YI
IXDD 430M YI
IXD D 430C I
IX D D 430M C I
IXD I430YI
IX D I430M YI
IXD I430C I
IX D I430M C I
IX D N 430YI
IXDN 430M YI
IXD N 430C I
IX D N 430M C I
Package
Type
5 -p in T O -2 63
5 -p in T O -2 20
5 -p in T O -2 63
5 -p in T O -2 20
5 -p in T O -2 63
5 -p in T O -2 20
IX D S 430S I 28-pin S O IC
Tem p. Range
-55°C to +125°
-55°C to +125°
-55°C to +125°
-55°C to +125°
C onfiguration
N o n In ve rtin g w ith
E n a b le
In v e rtin g
N on Inverting
Inverting / N on
In ve rtin g w ith
E n a b le
and UVSEL
U ndervoltage
L o c k -o u t
11.75 V
8.5 V
11.75 V
8.5 V
11.75 V
8.5 V
11.75 V
8.5 V
11.75 V
8.5 V
11.75 V
8.5 V
11.75 V
or
8.5 V
Copyright © IXYS CORPORATION 2005
First Release
DS99045C(04/04)